Principal Engineer, NAND Device Engineering

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

JR57621 Principal Engineer, NAND Device Engineering

Responsibilities:

• Contribute to device technology development of state-of-the-art NAND cell
• Perform electrical characterization of NAND cell arrays and test structures to identify device improvement directions
• Enable cell improvements (performance, reliability) by providing feedback to the Process Integration and Cell teams in Singapore and in Boise on process experiments and possible interactions with array operation
• Trim and waveform/algorithm engineering in order to improve cell threshold voltage placement, performance and reliability
• Utilize the first principles of device knowledge to develop novel array solutions
• Strong collaboration with product engineers, process engineers and test engineers

Requirements :

• Ph.D or Master s degree in Electrical engineering with focus on Semiconductor devices
• A strong understanding and experience with nonvolatile memories and in particular, NAND device physics. Experience with NAND cell trim and algo development is required. (Preferably 6+ years experience)
• Solid communication and reporting abilities.
• The ability to be highly skilled at driving for results in a time-constrained environment.

Education

• Ph.D. or Master s degree in Electrical engineering with a focus on Semiconductor devices

Experience:

• 10+ years of proven experience in Semiconductor Device Engineering

Location: Hyderabad