Internal structure of 3 lvl igbt

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Accepted Answer

3 lvl IGBT has 3 layers of n-type and p-type semiconductors sandwiched between metal plates.

IGBT stands for Insulated Gate Bipolar Transistor.
It is a three-terminal power semiconductor device.
The internal structure of 3 lvl IGBT consists of 3 layers of n-type and p-type semiconductors sandwiched between metal plates.
The n-type and p-type layers are alternately stacked to form a p-n-p-n structure.
The metal plates act as the gate and collector electrodes.
The gate electrode is insulated from the semiconductor layers by a thin layer of oxide.
The collector electrode is connected to the metal plates on the bottom of the device.
The emitter electrode is connected to the metal plates on the top of the device.
The 3 lvl IGBT is used in high power applications such as motor drives, power supplies, and inverters.

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