Explain the difference between BJT and MOSFET. What is a avalanche breakdown?

Question

Accepted Answer

BJT and MOSFET are two types of transistors. Avalanche breakdown is a phenomenon that occurs in both.

BJT is a bipolar junction transistor that uses both electrons and holes for conduction while MOSFET is a metal-oxide-semiconductor field-effect transistor that uses only electrons.
BJT has a higher gain and faster switching speed than MOSFET but is less efficient and generates more heat.
Avalanche breakdown is a phenomenon that occurs when a high voltage causes a large number of electrons to collide with atoms in the semiconductor material, creating more free electrons and causing a rapid increase in current.
This can cause damage to the transistor and is often prevented by using a Zener diode or other protective measures.
Both BJT and MOSFET can experience avalanche breakdown, but MOSFET is more susceptible due to its thinner gate oxide layer.

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